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Matching properties, and voltage and temperature dependence of MOS capacitors

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1 Author(s)

The matching properties of MOS capacitors are modeled and compared with measured data. A weighted-capacitor array design approach is described. Voltage and temperature dependence of MOS capacitors are analyzed, modeled, and compared with measured data. It is shown that to a first-order heavily doped polysilicon accumulates and depletes similar to crystalline silicon.

Published in:

IEEE Journal of Solid-State Circuits  (Volume:16 ,  Issue: 6 )