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A 16 DIP, 64 kbit, static MOS-RAM

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5 Author(s)

A 64K/spl times/1 bit fully static MOS-RAM has been fabricated. For the purpose of replacement of 64 kbit dynamic RAM, this static RAM has been designed to be assembled in a standard 300 mil 16 pin DIP. It is the first time address multiplexing has been in static RAMs. The device with multiple addressing and improved row decoder employs a double poly Si layer and a 1.5 /spl mu/m design rule which is achieved by advanced process technology. As a result, the RAM has a 11.0 /spl mu/m/spl times/26.5 /spl mu/m (291.5 /spl mu/m/SUP 2/) cell size and a 3.84 mm/spl times/7.40 mm (28.40 mm/SUP 2/) chip size. The address access time is less than 150 ns with an active power dissipation of 400 mW.

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:16 ,  Issue: 5 )