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A Model for the Lateral Variation of Autodoping in Epitaxial Films

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1 Author(s)

A model is presented that accounts for the variation of autodoping in epitaxial films grown by the chemical vapor deposition technique over substrates containing buried layers. This model is based on the dopant distribution that exists in the epitaxial reactor during growth. It is shown that the lateral variation of autodoping can be described by the following equation...

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Solid-State Circuits, IEEE Journal of  (Volume:15 ,  Issue: 4 )