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A potentially severe limit on density, performance, and virability of polysilicon-gate technologies for VLSI applications, is the high resistivity of polycrystalline silicon. Composite structures of highly conductive molybdenum or tungsten disilicide on top of polysilicon (polycide) are shown to be a viable alternative gate electrode and interconnect level. Sheet resistance values of 1-3 Omega//spl square/ for an integrated structure are easily attainable. IGFET devices fabricated to channel lengths of >=1.4 /spl mu/m show the polycide devices to be indistinguishable from normal polysilicon gate devices.