Cart (Loading....) | Create Account
Close category search window
 

Composite Silicide Gate Electrodes - Interconnections for VLSI Device Technologies

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)

A potentially severe limit on density, performance, and virability of polysilicon-gate technologies for VLSI applications, is the high resistivity of polycrystalline silicon. Composite structures of highly conductive molybdenum or tungsten disilicide on top of polysilicon (polycide) are shown to be a viable alternative gate electrode and interconnect level. Sheet resistance values of 1-3 Omega//spl square/ for an integrated structure are easily attainable. IGFET devices fabricated to channel lengths of >=1.4 /spl mu/m show the polycide devices to be indistinguishable from normal polysilicon gate devices.

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:15 ,  Issue: 4 )

Date of Publication:

Aug. 1980

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.