Cart (Loading....) | Create Account
Close category search window

An electrically alterable nonvolatile memory cell using a floating-gate structure

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)

An electrically alterable, floating-gate, nonvolatile memory transistor has been developed, with a cell area of under 500 /spl mu/m/SUP 2/, and using an advanced n-channel, polysilicon gate process. Cell programming occurs via hot-electron injection, exhibiting three distinct operating regimes. Erase, on the other hand, is based on field emission from floating gate to control gate. The magnitude of electrical erase is determined by applied bias, device parameters, and processing history, particularly the interlevel oxidation temperature. Analysis of experimental data shows that electrical erase does change programming characteristics significantly, and must be accounted for in circuit design. A 5-V, 16K high-speed EAROM has been developed which shows successful programming and erase behaviour at nominal voltages of 25 and 35 V, respectively.

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:14 ,  Issue: 2 )

Date of Publication:

April 1979

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.