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A 64 Kbit MOS dynamic random access memory

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5 Author(s)

A 65536 word/spl times/1 bit dynamic random access memory is developed using 4 /spl mu/m design rules, a 320-/spl Aring/ thick gate oxide film, and an improved double-poly n-channel silicon gate process. The chip is successfully encapsulated in a standard 16-pin dual-in-line ceramic package, and is able to take over the place that the current 16 Kbit dynamic RAM has occupied. It realizes high speed operation with access time of less than 100 ns and low power dissipation of less than 300 mW.

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:14 ,  Issue: 2 )

Date of Publication:

April 1979

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