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1 /spl mu/m MOSFET VLSI technology. IV. Hot-electron design constraints

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5 Author(s)

For pt.III see ibid., vol.SC14, no.2, p.255 (1979). An approach is described for determining the hot-electron-limited voltages for silicon MOSFETs of small dimensions. The approach was followed in determining the room-temperature and the 77K hot-electron-limited voltages for a device designed to have a minimum channel length of 1 /spl mu/m. The substrate hot-electron limits were determined empirically from measurements of the emission probabilities as a function of voltage using devices of reentrant geometry. The channel hot-electron limits were determined empirically from measurements of the injection current as a function of voltage and from long-term stress experiments.

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:14 ,  Issue: 2 )

Date of Publication:

April 1979

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