By Topic

High speed and high density static induction transistor memory

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)

Describes a high speed and high density dynamic RAM utilizing a static induction transistor (SIT) structure. The main conduction mechanism of an SIT is carrier injection control due to the potential hump at the intrinsic gate, where the potential hump is capacitively controlled by the gate and the drain voltage in a basic operation. The SIT forms a dynamic RAM memory cell if one of the drain and the source regions is set as a floating region directly connected to the storage capacitor. Basic operation of a single SIT memory cell is experimentally demonstrated in this paper.

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:13 ,  Issue: 5 )