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JFET's fabricated in a standard IC process for bipolar transistors

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2 Author(s)

A new method for the fabrication of n- and p-channel JFETs in a standard IC process for bipolar transistors is presented. Using special layout techniques, which are based on well-known principles, JFETs of good performance are obtained, provided a tightly controlled photoresist process is available.

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:13 ,  Issue: 4 )