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Modelling and measurement of surface impurity profiles of laterally diffused regions

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4 Author(s)

Analytic solutions for two-dimensional diffused profiles are obtained for a drive-in in an inert ambient and in an oxidizing ambient. For both cases, the impurity profiles have the same lateral dependence. An experiment which extracts the surface impurity profile near a diffusion mask edge is described. Test structures for this purpose have been fabricated using a CMOS process.

Published in:

IEEE Journal of Solid-State Circuits  (Volume:13 ,  Issue: 4 )