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A new SCCD specific measurement technique to determine the effective fast interface state density

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3 Author(s)

Taking into account the thermally generated minority carriers to determine the background charge level along a SCCD, a measurement technique is described to obtain an effective fast interface state density N/SUB SSeff/. Compared to other SCCD specific methods the authors achieve better accuracy. The measurement technique is simple to apply and is useful to determine very small values of N/SUB SSeff/.

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:13 ,  Issue: 3 )

Date of Publication:

June 1978

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