The current dependency of the output conductance of voltage-driven bipolar transistors

The current dependency of the output conductance of voltage-driven bipolar junction transistors (BJTs) is discussed. It is shown that by combining the established theories about basewidth modulation and thermal feedback the output admittance of voltage-driven BJTs can be accurately predicted over a large range of current levels. The current dependency of the output admittance of some basic IC configurations is discussed in detail.