Cart (Loading....) | Create Account
Close category search window
 

Role of the external n-p-n base region on the switching speed of integrated injection logic (I/sup 2/L)

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)

Two-dimensional simulation and charge control principles have been applied to reveal the factors which determine the minimum delay of an integrated injection logic (I/SUP 2/L) gate, and experimental verifications are carried out. Using a numerical analysis this paper shows that important factors in improving the speed of an I/SUP 2/L gate are reducing the amount of minority charge stored in the external base of the n-p-n transistor and use of a heavily doped emitter. It is, therefore, necessary that the concentration in the external base is increased as high as possible and that the diffusion depth is controlled with good accuracy. Improvement in speed by a factor of 2 is experimentally realized as the simulation predicts. The heavily doped external base improves upward current gain and reduces base resistance, achieving a high fan-out capability.

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:12 ,  Issue: 2 )

Date of Publication:

April 1977

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.