Referenced Items are not available for this document.
An analytical model for the charge loss as a function of transfer time under low charge levels in surface channel charge-coupled devices has been theoretically determined and experimentally confirmed. The model includes the effect of surface states. A new method of measuring charge transfer makes it possible to determine the role that surface states play in the degradation of signal charge transfer.
Published in:
Solid-State Circuits, IEEE Journal of
(Volume:12
,
Issue:
1
)
Date of Publication: Feb 1977
- Page(s):
- 45 - 50
- ISSN :
- 0018-9200
- Digital Object Identifier :
- 10.1109/JSSC.1977.1050839
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 January 2003
- Issue Date :
- Feb 1977
- Sponsored by :
- IEEE Solid-State Circuits Society
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