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Charge transfer in overlapping gate charge-coupled devices

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3 Author(s)

A detailed numerical simulation of the free charge transfer in overlapped gate charge-coupled devices is presented. The transport are analyzed in terms of thermal diffusion, self-induced fields, and fringing fields under all the relevant electrodes and interelectrode regions with time-varying gate potentials. The results of the charge transfer with different clocking schemes and clocking waveforms are presented. The dependence of the stages of the charge transfer on the device parameters are discussed in detail. A lumped-circuit model of CCD that could be used to obtain the charge-transfer characteristics with various clocking waveforms is also presented.

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:8 ,  Issue: 3 )