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N-channel ion-implanted enhancement/depletion MOSFET's

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1 Author(s)

The fabrication and performance of n-channel ion-implanted, TTL compatible, enhancement/depletion MOSFET devices and circuits are described. A speed-power product of 10.0 pJ/pF has been experimentally observed.

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:8 ,  Issue: 2 )