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A new complementary monolithic transistor structure

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2 Author(s)

A novel complementary monolithic bipolar transistor structure has been developed. By adding one extra diffusion to the standard monolithic bipolar transistor process a pair of high current gain and very low saturation resistance n-p-n and p-n-p transistors can be fabricated on the same chip. High sheet resistances are also present in this structure.

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:7 ,  Issue: 2 )