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A new approach for modelling bipolar transistors in the microwave region under class-C conditions is presented. The following features were combined in the modelling procedure: 1) modelling at microwave frequencies, 2) modelling under large-signal class-C conditions, 3) modelling under mismatched conditions, and 4) correlation between measurements and modelling results. A model has been economically implemented and sufficient accuracy was obtained for: 1) device modelling over a range of operating conditions for which direct experimental characterization is not economically obtainable, 2) optimizing decisions for improved device fabrication, and 3) computer optimization of matching networks for microwave transistors.
Date of Publication: Feb. 1972