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The basic properties of the metal insulator semiconductor (MIS) varactor are explained. Its application in an upper sideband upconvertor at an RF of 2.3 GHz and an IF of 70 MHz is investigated and compared to that of a charge storage varactor. It is shown that the MIS varactor is in many respects superior to the charge-storage varactor in tuning, optimization of RF efficiency, stability, suppression of unwanted harmonics, and bandwidth.
Date of Publication: Feb. 1972