By Topic

Drift-aiding fringing fields in charge-coupled devices

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)

Transverse electric fields at the Si-SiO/SUB 2/ interface (fringing fields) can aid transfer of charge from one potential well to another in charge- coupled devices (CCD). The magnitudes of these drift-aiding fringing fields are evaluated by an approximate analysis and also by computer. The analytical approach assumes zero space charge in the silicon and agrees with the computer solutions in that limit. When the depletion width becomes less than the gate width the fringing field is reduced considerably. Transit times associated with these fringing fields are evaluated. Trapping of charge in interface states rather than transfer of free charge is expected to be the fundamental limitation on speed and transfer efficiency in appropriately designed CCDs.

Published in:

IEEE Journal of Solid-State Circuits  (Volume:6 ,  Issue: 5 )