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A highly efficient adaptive mesh approach to semiconductor device simulation-application to impact ionization analysis

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3 Author(s)
Dang, R. ; Coll. of Eng., Hosei Univ., Tokyo, Japan ; Matsushita, K. ; Hayashi, H.

In the simulation of semiconductor devices, it is desirable to obtain accurate results at low calculation costs. Both conditions are, however, difficult to satisfy simultaneously since high accuracy always calls for a high computation cost. This is mainly due to the need for a large mesh number for the numerical solution of governing equations. Since the adaptive mesh method is known to be effective in dealing with a tradeoff problem of this kind, the authors propose an efficient adaptive mesh-generation algorithm based on an evaluation of impact ionization discretization errors. It is found that the approach reduces computation cost at no expense in accuracy.

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Magnetics, IEEE Transactions on  (Volume:27 ,  Issue: 5 )