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In the simulation of semiconductor devices, it is desirable to obtain accurate results at low calculation costs. Both conditions are, however, difficult to satisfy simultaneously since high accuracy always calls for a high computation cost. This is mainly due to the need for a large mesh number for the numerical solution of governing equations. Since the adaptive mesh method is known to be effective in dealing with a tradeoff problem of this kind, the authors propose an efficient adaptive mesh-generation algorithm based on an evaluation of impact ionization discretization errors. It is found that the approach reduces computation cost at no expense in accuracy.