By Topic

Effects of technology on digital-circuit design and performance at microwatt power levels

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)

Digital-circuit-design considerations peculiar to microwatt power levels are described, the effect of device geometry and structure on propagation delay is discussed, and micropower arrays built to complete the project are described. Active device capacitances dominate transient response in microwatt gates when high-sheet-resistive, thin-film resistors are used (20 k/spl Omega///spl square/ SiCr). Active device area may or may not dominate chip size, depending on power level and resistor-sheet resistivity. For 5-/spl mu/W gates and 20-k/spl Omega///spl square/ resistors, active device areas have only a small effect on chip size.

Published in:

IEEE Journal of Solid-State Circuits  (Volume:5 ,  Issue: 1 )