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Technology and performance of integrated complementary MOS circuits

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1 Author(s)

The desirable characteristics of complementary MOS circuits are low standby power consumption, high speed, and high noise immunity. These require close control and matching of n- and p-channel transistor characteristics. Acceptable limits for mismatch between devices were derived based on circuit considerations and were related to process variables. Predicted performances were achieved using test circuits; feasibility of the technology has been shown. The reliability of fabricated test structures was evaluated.

Published in:

IEEE Journal of Solid-State Circuits  (Volume:4 ,  Issue: 3 )