Referenced Items are not available for this document.
A new equivalent circuit for the insulated-gate field-effect transistor (IGFET) is described. This device model is particularly useful for computer-aided analysis of monolithic integrated IGFET switching circuits. The results of computer simulations using the new equivalent circuit are in close agreement with experimental observations. As an example of a practical application, simulation results are shown for an integrated circuit IGFET memory cell.
Published in:
Solid-State Circuits, IEEE Journal of
(Volume:3
,
Issue:
3
)
Date of Publication: Sep 1968
- Page(s):
- 285 - 289
- ISSN :
- 0018-9200
- Digital Object Identifier :
- 10.1109/JSSC.1968.1049902
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 January 2003
- Issue Date :
- Sep 1968
- Sponsored by :
- IEEE Solid-State Circuits Society
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