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Modeling and simulation of insulated-gate field-effect transistor switching circuits

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2 Author(s)

A new equivalent circuit for the insulated-gate field-effect transistor (IGFET) is described. This device model is particularly useful for computer-aided analysis of monolithic integrated IGFET switching circuits. The results of computer simulations using the new equivalent circuit are in close agreement with experimental observations. As an example of a practical application, simulation results are shown for an integrated circuit IGFET memory cell.

Published in:

IEEE Journal of Solid-State Circuits  (Volume:3 ,  Issue: 3 )