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Determination of ZnO temperature coefficients using thin film bulk acoustic wave resonators

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4 Author(s)
Pinkett, S.L. ; Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA ; Hunt, W.D. ; Barber, B.P. ; Gammel, P.L.

Thin film bulk acoustic wave (BAW) resonators have been the subject of research in RF microelectronics for some time. Much of the interest lay in utilizing the resonators to design filters for wireless applications. Some of the major advantages BAW devices present over other filter technologies in use today include size reduction and the possibility of on-chip integration. As the technology matures, the necessity to more fully characterize the performance of the devices and to develop more accurate models describing their behavior is apparent. In this investigation, the effects that temperature variations have on 1.8-2.0 GHz zinc oxide (ZnO)-based solidly mounted BAW resonators (SMRs) are studied. The average temperature coefficients of the series and parallel resonant frequencies of the fabricated devices are found to be -31.5 ppm//spl deg/C and -35.3 ppm//spl deg/C, respectively. The slight decrease in separation between the two resonant frequencies with temperature implies there is slightly less effective coupling with increased temperature. No definite trend is found describing the behavior of the quality factor (Q) of the resonator with temperature variations. With little temperature coefficient data for thin film ZnO available in the literature, the importance of an accurate model is evident. The resonator device performance is simulated using Ballato's electronic circuit model for acoustic devices on a SPICE-based platform. By virtue of the comparison between the predicted and measured device response, various material parameters are extracted.

Published in:

Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on  (Volume:49 ,  Issue: 11 )

Date of Publication:

Nov. 2002

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