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Static and dynamic behaviour of transistors in the avalanche region

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1 Author(s)

The behavior has been studied assuming that the transistor is acting as a nonlinear negative resistance dipole, defined from its I-V characteristics. A simple method has been obtained to plot the static characteristic with good accuracy. Then the nonlinear differential equations for a simple switching circuit are graphically solved and the theory is compared with the experimental results.

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Solid-State Circuits, IEEE Journal of  (Volume:6 ,  Issue: 2 )