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The design, fabrication and characteristics of a coplanar distributed ultra broadband amplifier are presented. The circuit is fabricated using a composite channel InP CC-HEMT high breakdown voltage technology developed in Alcatel OPTO+. It exhibits an average gain of 13 dB over a 92 GHz -3dB cut-off frequency that corresponds to a state of the art gain-bandwidth product of 410 GHz for baseband amplifier ICs. It still presents 8 dB gain at 110 GHz. Such an amplifier is a good candidate for 40 and 80 Gbit/s optoelectronic driver modules applications. We discuss the use of coplanar waveguide lines and low impedance bias microstrip transmission lines in such a design. We also highlight the need of largest bandwidths for 40 Gbit/s eye diagram quality and the needed gain-bandwidth product for 80 Gbit/s ETDM communications.
Published in:
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2002. 24th Annual Technical Digest
Date of Conference: 2002
- Page(s):
- 103 - 106
- ISSN :
- 1064-7775
- Print ISBN:
- 0-7803-7447-9
- INSPEC Accession Number:
- 7554310
- Digital Object Identifier :
- 10.1109/GAAS.2002.1049039
- Product Type:
- Conference Publications
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