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For thin resistor film with low TCR (temperature coefficient of resistance) and high resistivity, we have fabricated thin films using the DC/RF magnetron sputtering of 51 wt%Ni-41 wt%Cr- 8 wt%Si alloy target and studied the effect of the process parameters on the electrical properties. Resistivity was 172 [μΩ·cm] and 209 [μΩ·cm] and TCR were -52 [ppm/°C] and -25 [ppm/°C] for RF and DC as a power source, respectively. The sheet resistance and TCR increase with increasing the substrate and annealing temperature. From these results, it is suggested that the sheet resistance and TCR of thin films can be controlled by variation of sputter process parameters and annealing of thin film.