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A new dual gate design for low current pulse operation in 16 Mb ion-implanted bubble memory devices

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7 Author(s)
Sato, T. ; Hitachi Ltd., Chiba, Japan ; Saito, K. ; Hiroshima, M. ; Yanai, M.
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A design for a dual gate which has both pseudoswap and block-replicate functions for 16-Mb ion-implanted bubble memory devices has been proposed and shown by Sato et al. (1987) to reduce the operation current-pulse amplitude. The dual gate is composed of a pair of hair-pin conductor patterns in two layers and ion-implanted tracks for the major line and the minor loop corner. The current pulses are applied through the hair-pin conductor patterns to stretch, cut, or annihilate bubbles for the operation of the dual gate. The functions of the dual gate were realized with low current pulses of less than 150 mA using 0.8-μm-diameter bubbles. It is therefore confirmed that the dual gate with low-current operation makes the 16-Mb ion-implanted bubble memory devices more practical

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Magnetics, IEEE Transactions on  (Volume:26 ,  Issue: 5 )