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Investigations on Ta2O5/ZnO insulator-semiconductor interfaces

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10 Author(s)
Nandi, S.K. ; Dept. of Electron. & Electr. Commun. Eng., Indian Inst. of Technol., Kharagpur, India ; Choi, W.K. ; Noh, Y.S. ; Oh, M.S.
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The electrical and interfacial properties of Ta2O5/ZnO/p-Si metal-insulator-semiconductor structures are investigated using high frequency capacitance-voltage and conductance-voltage characteristics. Charge trapping behaviour under Fowler-Nordheim constant current stressing is also reported. An interface state density (1.22 × 1012 cm-2 eV-1) has been observed for the Ta2O5/ZnO interface.

Published in:

Electronics Letters  (Volume:38 ,  Issue: 22 )

Date of Publication:

24 Oct 2002

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