By Topic

High performance 1500 V 4H-SiC junction barrier Schottky diodes

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $33
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
J. H. Zhao ; United Silicon Carbide Inc., New Brunswick, NJ, USA ; P. Alexandrov ; L. Fursin ; Z. C. Feng
more authors

The design, fabrication and characterisation results are reported of junction barrier Schottky (JBS) diodes of 1500 V-9 A and 1000 V-50 A based on 10.5 μm 4H-SiC blocking layers doped to 6.4 × 1015 cm-3 and 1.3 × 1016 cm-3, respectively. The clear advantages of JBS diodes over conventional Schottky diodes can be achieved without extra fabrication penalty.

Published in:

Electronics Letters  (Volume:38 ,  Issue: 22 )