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High performance 1500 V 4H-SiC junction barrier Schottky diodes

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5 Author(s)
Zhao, J.H. ; United Silicon Carbide Inc., New Brunswick, NJ, USA ; Alexandrov, P. ; Fursin, L. ; Feng, Z.C.
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The design, fabrication and characterisation results are reported of junction barrier Schottky (JBS) diodes of 1500 V-9 A and 1000 V-50 A based on 10.5 μm 4H-SiC blocking layers doped to 6.4 × 1015 cm-3 and 1.3 × 1016 cm-3, respectively. The clear advantages of JBS diodes over conventional Schottky diodes can be achieved without extra fabrication penalty.

Published in:

Electronics Letters  (Volume:38 ,  Issue: 22 )