By Topic

40-GHz coplanar waveguide bandpass filters on silicon substrate

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Chan, K.T. ; Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan ; Chen, C.Y. ; Chin, A. ; Hsieh, J.C.
more authors

We report a very simple process to fabricate high performance filter on Si at 40 GHz using proton implantation. The filter has only -3.4-dB loss at peak transmission of 40 GHz with a broad 9-GHz bandwidth. In sharp contrast, the filter on 1.5-μm SiO2 isolated Si has much worse transmission and reflection loss. This is the first demonstration of high performance filter at the millimeter-wave regime on Si with process compatible with current VLSI technology.

Published in:

Microwave and Wireless Components Letters, IEEE  (Volume:12 ,  Issue: 11 )