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Effects of output harmonic termination on PAE and output power of AlGaN/GaN HEMT power amplifier

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8 Author(s)
Chung, Y. ; Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA ; Hang, C.Y. ; Cai, S. ; Chen, Y.
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The authors experimentally investigate and discuss the effects of output harmonic termination on power added efficiency (PAE) and output power of an AlGaN/GaN high electron mobility transistor (HEMT) power amplifier (PA). The AlGaN/GaN HEMT PA with gate periphery of 1 mm was built and tested at L-band. Large-signal measurements and comparisons of the PAE and output power were carried out at different DC bias conditions from 50% of saturated drain current (I/sub dss/) to 1% of Id., for the PA with and without output harmonic termination. For class-AB operation at 25% of I/sub dss/, an increase of about 10% in peak PAE and 1 dBm in output power were observed in saturated output power range. Improvements of up to 9% in PAE and 1.2 dBm in output power were achieved over the measured DC bias conditions provided the output harmonics are properly terminated.

Published in:

Microwave and Wireless Components Letters, IEEE  (Volume:12 ,  Issue: 11 )

Date of Publication:

Nov. 2002

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