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A 44-mm2 four-bank eight-word page-read 64-Mb flash memory with flexible block redundancy and fast accurate word-line voltage controller

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14 Author(s)
Tanzawa, T. ; Toshiba Corp., Yokohama, Japan ; Umezawa, A. ; Taura, T. ; Shiga, H.
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The highest bit-density 64-Mb NOR flash memory with dual-operation function of 44 mm2 was developed by introducing negative-gate channel-erase NOR flash memory cell technology, 0.16-μm CMOS flash memory process technology, and four-bank hierarchical word-line and bit-line architecture. The chip has flexible block redundancy for high yield, a fast accurate word-line voltage controller for a fast erasing time of 0.5 s, and an eight-word page-read access capability for high read performance of an effective access time of 30 ns at a wide supply voltage range of 2.3-3.6 V.

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:37 ,  Issue: 11 )