90nm SOI-CMOS of 150GHz f_max and 0.8dB NF_min @6GHz for SOC

Recently, CMOS devices with 150 GHz f_max have been reported with a 0.18 μm bulk CMOS technology. This paper describes a complete high frequency characterization of MOSFET devices obtained with a 0.13 μm partially-depleted SOI technology, including for the first time microwave noise parameters on 90 nm SOI devices. A high f_max of 150 GHz and a low minimum noise figure of 0.8 dB with an associated gain of 16 dB @ 6 GHz have been obtained @1.2V under low power consumption (7mW).