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90nm SOI-CMOS of 150GHz fmax and 0.8dB NFmin @6GHz for SOC

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8 Author(s)
Vanmackelberg, M. ; IEMN, Villeneuve d''Ascq, France ; Boret, S. ; Gloria, D. ; Rozeau, O.
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Recently, CMOS devices with 150 GHz fmax have been reported with a 0.18 μm bulk CMOS technology. This paper describes a complete high frequency characterization of MOSFET devices obtained with a 0.13 μm partially-depleted SOI technology, including for the first time microwave noise parameters on 90 nm SOI devices. A high fmax of 150 GHz and a low minimum noise figure of 0.8 dB with an associated gain of 16 dB @ 6 GHz have been obtained @1.2V under low power consumption (7mW).

Published in:

SOI Conference, IEEE International 2002

Date of Conference:

7-10 Oct 2002