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Analytical model for a transient floating body voltage in PD-SOI MOSFETs

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3 Author(s)
Jeong-Hyong Yi ; Sch. of EECS, Seoul Nat. Univ., South Korea ; Chan Hyeong Park ; Min, Hong Shick

In this work, by introducing the concept of charge sharing, we present a new model for partially depleted SOI MOSFETs, in which the floating body voltage can be determined by using an analytical expression with only device parameters.

Published in:

SOI Conference, IEEE International 2002

Date of Conference:

7-10 Oct 2002