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A high performance double-gate SOI MOSFET using lateral solid phase epitaxy

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5 Author(s)
Liu, Haitao ; Dept. of Electron. & Electr. Eng., Hong Kong Univ. of Sci. & Technol., China ; Zhibin Xiong ; Sin, J.K.O. ; Peiqi Xuan
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We fabricate a double-gate SOI MOSFET using lateral solid phase epitaxy with high dose Si and Ge ion implantation. Device characterization showed that the double-gate MOSFET has superior performance as compared to the single-gate SOI MOSFET in terms of current drive, subthreshold slope, and Vt roll-off. The effective electron mobility of the LSPE crystallized layer is only 17% lower than that of commercial SOI wafers.

Published in:

SOI Conference, IEEE International 2002

Date of Conference:

7-10 Oct 2002