Cart (Loading....) | Create Account
Close category search window
 

Performance assessment of scaled strained-Si channel-on-insulator (SSOI) CMOS

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Keunwoo Kim ; IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA ; Ching-Te Chuang ; Kern Rim ; Joshi, R.V.

Strained-Si channel devices have recently become of interest for future high-performance applications due to higher carrier mobility and preservation of conventional device structure/geometry. One important feature in the strained-Si devices is the heterostructural band offset in the channel and buffer layer, which reduces Vt, thereby increasing Ioff. We assess the circuit performance of strained-Si devices including SSOI via a physics-based circuit model calibrated against fabricated 70 nm strained and unstrained (control) devices. Device design point and performance projection and trade-off are presented, thus allowing exploitation of maximum performance in the strained-Si devices.

Published in:

SOI Conference, IEEE International 2002

Date of Conference:

7-10 Oct 2002

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.