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This paper investigates the feasibility of using silicon-silicon bonding technology for combined bipolar-MOSFET-devices (BIMOS) such as MOS-turn-off thyristors (MTO). With the help of this new bonding technique several power MOSFETs are connected to a bipolar disc-type device structure. The MOSFET dies are used to switch the BIMOS-device. At the same time, the reverse conducting diode of the MOSFETs operates as a pn-junction of the classical thyristor structure during on-state. The proposed technology accomplishes the fabrication of BIMOS-devices without bonding wires, which are used in state-of-the-art MTO and ETO devices. Device operation similar to a fully integrated structure can be achieved without the technological problems in manufacturing VLSI-structures on large disc-type devices. In this paper, different MTO type device topologies based on the proposed idea are presented and compared by finite element simulation results.
Industry Applications Conference, 2002. 37th IAS Annual Meeting. Conference Record of the (Volume:3 )
Date of Conference: 13-18 Oct. 2002