By Topic

Optimization of front-end design in imaging and spectrometry applications with room temperature semiconductor detectors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Fabris, L. ; Lawrence Berkeley Nat. Lab., CA, USA ; Manfredi, P.

This paper addresses the optimization of front-end design in position sensing, imaging and high-resolution energy dispersive analysis with room temperature semiconductor detectors. The focus is on monolithic solutions able to meet the requirements of high functional densities set by multielectrode, finely segmented detectors. Front-end architectures featuring additional functions besides charge measurements, as demanded by the need of acquiring and processing multiparametric information associated with the detector signals will be discussed. Noise will be an issue of dominant importance in all the following analysis. The advent of CMOS processes featuring submicron gate length and gate oxide thicknesses in the few nanometers region is overturning some of the classical criteria in the choice of the front-end device. The achievement of the limits in resolution requires a strict control of the noise contribution from the current amplifier which ordinarily follows the front-end element in the charge-sensitive loop. This aspect becomes more crucial in designing front-end systems with submicron processes.

Published in:

Nuclear Science, IEEE Transactions on  (Volume:49 ,  Issue: 4 )