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New systematic measurements of effective carrier trapping times were used as an input to simulate the operation of an irradiated silicon strip detector. The dependence of charge-collection efficiency (CCE) on bias voltage, magnetic field, irradiation particle type, fluence, and detector design was investigated. It was observed that irradiated detectors processed on standard n-silicon material with n+ strips performed better than those with p+ strips. At Φeq=2×1014 cm-2, the difference in CCE was around 10% at voltages well above VFD and even larger for lower voltages. A few percent difference in CCE for different track paths across the strip was observed. The effective Lorentz angle was found to be independent of the irradiation level. A nonnegligible amount of charge also appears on neighboring strips as a consequence of charge trapping. The influence of detector thickness and strip width on induced charge was also studied.