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A 12 × 12 In0.53Ga0.47As-In0.52Al0.48As avalanche photodiode array

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10 Author(s)
Zheng, X.G. ; Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA ; Hsu, J.S. ; Sun, X. ; Hurst, J.B.
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We report a 12 × 12 In0.53Ga0.47As-In0.52Al0.48As avalanche photodiode (APD) array. The mean breakdown voltage of the APD was 57.9 V and the standard deviation was less than 0.1 V. The mean dark current was ∼2 and ∼300 nA, and the standard deviation was ∼0.19 and ∼60 nA at unity gain (Vbias = 13.5 V) and at 90% of the breakdown voltage, respectively. External quantum efficiency was above 40% in the wavelength range from 1.0 to 1.6 μm. It was ∼57% and ∼45% at 1.3 and 1.55 μm, respectively. A bandwidth of 13 GHz was achieved at low gain.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:38 ,  Issue: 11 )

Date of Publication:

Nov 2002

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