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QUBiC4G: a fT/fmax = 70/100 GHz 0.25 μm low power SiGe-BiCMOS production technology with high quality passives for 12.5 Gb/s optical networking and emerging wireless applications up to 20 GHz

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15 Author(s)
Deixler, P. ; Philips Semicond., Hopewell Junction, NY, USA ; Colclaser, R. ; Bower, D. ; Bell, N.
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QUBiC4G is a robust very low-power SiGe RF-BiCMOS technology for emerging wireless and optical networking with NPN fT/fmax up to 70/100 GHz and BVceo = 2.7 V, excellent substrate isolation, 0.25 μm CMOS, full suite of high quality passives, 5 metal layers and an advanced design flow. We present a 12.5 Gb/s optical networking crosspoint switch and a low-noise 20 GHz LC-VCO.

Published in:

Bipolar/BiCMOS Circuits and Technology Meeting, 2002. Proceedings of the 2002

Date of Conference:

2002