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Optimization of a SiGe:C HBT in a BiCMOS technology for low power wireless applications

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11 Author(s)
John, J.P. ; Semicond. Products Sector, Motorola Inc., Tempe, AZ, USA ; Chai, F. ; Morgan, D. ; Keller, T.
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The performance enhancement of a SiGe:C HBT for RF/IF applications is described for Motorola's 0.35 μm and 0.18 μm BiCMOS technologies. Cutoff frequencies (fT) have been improved from 50 GHz to 78/84 GHz (0.35/0.18 μm BiCMOS), with a reduction in minimum noise figure (NF) from 0.7 dB to 0.30 dB. Improvements occurred through the optimization of the intrinsic collector and base dopant profiles, extrinsic collector resistance, and device layout.

Published in:
Bipolar/BiCMOS Circuits and Technology Meeting, 2002. Proceedings of the 2002

Date of Conference: 2002

Page(s):
193 - 196
ISSN :
1088-9299
Print ISBN:
0-7803-7561-0
INSPEC Accession Number:
7509031
Digital Object Identifier :
10.1109/BIPOL.2002.1042916

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