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Substrate current control in smart power IC's with a flexible protection structure

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5 Author(s)
Laine, J.P. ; Lab. d''Autom. et d''Anal. des Syst., CNRS, Toulouse, France ; Gonnard, O. ; Charitat, G. ; Bafleur, M.
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Crosstalks between high voltage power devices and low voltage CMOS devices due to substrate current are a major problem in automotive applications. This parasitic current induces unexpected failure system such as latchup in CMOS circuits. In this paper, an efficient, compact and flexible pull-down protection is proposed against this substrate current. It reduces this latter by more than 8 decades below the injected current level.

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Bipolar/BiCMOS Circuits and Technology Meeting, 2002. Proceedings of the 2002

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