Cart (Loading....) | Create Account
Close category search window
 

Substrate current control in smart power IC's with a flexible protection structure

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Laine, J.P. ; Lab. d''Autom. et d''Anal. des Syst., CNRS, Toulouse, France ; Gonnard, O. ; Charitat, G. ; Bafleur, M.
more authors

Crosstalks between high voltage power devices and low voltage CMOS devices due to substrate current are a major problem in automotive applications. This parasitic current induces unexpected failure system such as latchup in CMOS circuits. In this paper, an efficient, compact and flexible pull-down protection is proposed against this substrate current. It reduces this latter by more than 8 decades below the injected current level.

Published in:

Bipolar/BiCMOS Circuits and Technology Meeting, 2002. Proceedings of the 2002

Date of Conference:

2002

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.