By Topic

Fused InGaAs-Si avalanche photodiodes with low-noise performances

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

9 Author(s)
Kang, Y. ; Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA ; Mages, P. ; Clawson, A.R. ; Yu, P.K.L.
more authors

A fused InGaAs-Si avalanche photodiode (APD) with a low excess noise factor of 2.3 at a gain of 20 is reported. This corresponds to a k factor of 0.02 for the silicon avalanche region. Dark current density as low as 0.04 mA/cm/sup 2/ at -5 V and 0.6 mA/cm/sup 2/ at a gain of 10 are measured; a small thermal coefficient, 0.09%//spl deg/C, of the breakdown voltage is observed for this APD.

Published in:

Photonics Technology Letters, IEEE  (Volume:14 ,  Issue: 11 )