Referenced Items are not available for this document.
The integration of the amorphous silicon (a-Si:H) thin film transistor on top of a crystalline p-type silicon metal-oxide-semiconductor (pMOS) transistor to serve as active load has been achieved successfully. The vertical integration of crystalline silicon and amorphous silicon circuits to form the three dimensional structure is a promising technique for future application in high density memory cells and neural network image sensors.
Published in:
Electronics Letters
(Volume:27
,
Issue:
23
)
Date of Publication: 7 Nov. 1991
- Page(s):
- 2180 - 2181
- ISSN :
- 0013-5194
- INSPEC Accession Number:
- 4056745
- Digital Object Identifier :
- 10.1049/el:19911349
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- 7 Nov. 1991
- Sponsored by :
- Institution of Engineering and Technology
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