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Molecular beam epitaxy-grown AlGaInAs/InP distributed Bragg reflectors for 1.55 μm VCSELs

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5 Author(s)
M. H. M. Reddy ; Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA ; T. Asano ; R. Koda ; D. A. Buell
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Solid source molecular beam epitaxy with valved P cracker source is used for the first time to grow an AlGaInAs/InP distributed Bragg reflector (DBR). The DBR shows a measured reflectivity of 98.78% for 25 pairs with a stop band of more than 100 nm. Current-voltage study shows a low drop of 4 mV/pair

Published in:

Electronics Letters  (Volume:38 ,  Issue: 20 )