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Complementary vertical bipolar transistor process using high-energy ion implantation

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3 Author(s)
F. W. Ragay ; MESA Res. Inst., Twente Univ., Enschede, Netherlands ; A. A. I. Aarnink ; H. Wallinga

High-energy ion implantation is used as a key processing step in the formation of a complementary bipolar process with both transistor types being vertical. Both n-p-n and p-n-p transistors are made vertically with a deep implanted collector region. Combinations of epitaxial and buried layers are avoided. Both transistors have an ideal Gummel plot with a current gain of about 60. Cutoff frequencies of over 1 GHz have been measured, which is much higher than for conventional lateral p-n-p transistors.

Published in:

Electronics Letters  (Volume:27 ,  Issue: 23 )